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Material and performance parameters
Product Description
Advanced Interdigitated Electrode ESC
Clamped Substrate Material
Silicon, Sapphire, Glass,
Electrode Gap
≥ 0.3mm
Purity
> 99.9% Alumina
Resistivity
> 1.0 E15 Ω.cm
Current Leakage
< 1μA
Dielectric Constant
7.2 - 7.5 @ 1MHz
Breakdown Voltage
> 20 kV/mm
Typical Operation Voltage
± 1000 V to ± 4000V
Clamping Force/Pressure
> 50 Torr with < 2 sccm Gas Leak Rate
Release & Clamp Time
< 1 sec
Reference 1 (Standard ESC)
Product Description
Standard ESC
Purity
> 99.9% Alumina
Resistivity
> 1.0 E15 Ω.cm
Current Leakage
< 1μA
Dielectric Constant
7.2 - 7.5 @ 1MHz
Breakdown Voltage
> 20 kV/mm
Typical Operation Voltage
± 800 V to ± 4000V
Clamping Force/Pressure
> 50 Torr with < 2 sccm Gas Leak Rate
Release & Clamp Time
< 1 sec
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